• 2020-2021: KYDA 2020, IKY, Programme for the promotion of the exchange and scientific cooperation between Greece and Germany
    Strain Tuning of III-V Semiconductor Nanowires (TUNE)
  • 2018-2020:“FEG TEM/STEM” of Axis: Ax01 – Strengthening research, technological development and innovation – EYDEP. REGION OF CENTRAL MACEDONIA
    TRANSMISSION-SCANNING/TRANSMISSION ELECTRON MICROSCOPE WITH FIELD EMISSION GUN ELECTRON SOURCE
  • 2018-2020:“ΕΙΝSΤΕΙΝ” of the Nationwide Action “Bilateral R&T Cooperation between Greece and Russia” under the Operational Program “Competitiveness, Entrepreneurship and Innovation (EPANEK)”
    Experimental and theoretical studies of physical properties of low dimensional quantum nanoelectronic systems
  • 2018-2020:“INNOVATION-EL” project implemented under the Action “Reinforcement of the Research and Innovation Infrastructure”, funded by the Operational Programme “Competitiveness, Entrepreneurship and Innovation” (NSRF 2014-2020) and co-financed by Greece and the European Union (European Regional Development Fund)
  • 2018-2019: IKYDA 2018 (Programme for the promotion of the exchange and scientific cooperation between Greece and Germany)
    Superlattices of ultrathin InGaN/GaN quantum wells for advanced optoelectronics and topological insulator applications (ULTIMAT)
  • 2017-2020: HARMONIA UMO-2016/22/M/ST5/00298 (Polish National Science Centre) -UNIPRESS
    Stacking faults in wurtzite structure as a source of threading dislocations in nitride epitaxial heterostructures
  • 2016-2017: IKY Fellowships of Excellence for Postgraduate Studies in Greece – SIEMENS PROGRAM
    Computational Study of Structural and Electronic Properties of Technological Materials at the Atomic Level
  • 2015 – 2017: Research Projects for Excellence IKY/Siemens, in the framework of the Hellenic Republic – Siemens Settlement Agreement
    Simulation of elastic stress-strain fields in quantum nanostructures
  • 2014-2016: BRIDGE – Unipress Poland, Foundation for Polish Science
    Elimination of structural defects in nitride semiconductor layers (InGaN and InAlGaN) used as
    active layers in semiconductor lasers
  • 2014-2015: ARISTEIA II Program, “Education and Lifelong Learning”, National Strategic Reference Framework
    Nanowire Innovative Light Emitting Devices and Solar Cells “NILES”
  • 2012 – 2015: Thales Program, “Education and Lifelong Learning”, National Strategic Reference Framework
    Development of an integrated methodology for the management, treatment and valorisation of hazardous waste “WasteVal”
  • 2012 – 2015: Thales Program, “Education and Lifelong Learning”, National Strategic Reference Framework
    Nanophotonic Semiconductor Device “NANOPHOS”
  • 2012 – 2015: Thales Program, “Education and Lifelong Learning”, National Strategic Reference Framework
    High Efficiency III-Nitride Semiconductor Photovoltaic Devices
  • 2012 – 2015: Thales Program, “Education and Lifelong Learning”, National Strategic Reference Framework
    Spontaneous growth, properties and devices of III-V semiconductor nanowires “NanoWIRE”
  • 2012 – 2015: ARCHIMEDES-EΠΕΑΕΚ
    Mechanical and structural properties at the nanoscale of semiconducting films for opto- and microelectronic applications “NANOMECH”
  • 2012 – 2013: “Modeling of Nitride based Semiconductor’s Interfaces”-project-No:lsprob106s1 This project was supported by the LinkSCEEM-2 project, funded by the European Commission under the 7th Framework Program through Capacities Research Infrastructure, INFRA-2010-1.2.3 Virtual Research Communities, Combination of Collaborative Project and Coordination and Support Actions (CP-CSA) under grant agreement no RI- 261600.
  • 2011 – 2013: GSRΤ, Joint Research and Technology programs Greece – Czech Republic
    III-V semiconductor heterostructures/nanostructures towards innovative electronic and photonic applications
  • 2010 – 2013: Research Funding Program: Heracleitus II.
    This research has been co-financed by the European Union (European Social Fund – ESF) and Greek national funds through the Operational Program “Education and Lifelong Learning” of the National Strategic Reference Framework (NSRF). Investing in knowledge society through the European Social Fund.
  • 2008 – 2011: ISΤ- STREP – GA 224212 “DOTSENSE”
    Group III-Nitride quantum Dots as optical transducers for chemical sensors http://www.dotsense.eu/
  • 2007 – 2009: IDEAS/European Space Agency, Contract No. 21071//07/NL/PA
    Multi-functional thin film coatings based on Nano-structured metallic glasses and COmposites for SpAce applications
  • 2005 – 2009: Marie Curie Research Training Network (MCRTN), Contract MRTN-CT-2004-005583 of the EU.
    Interfacial Phenomena at Atomic Resolution and multiscale properties of novel III-V SEMiconductors (PARSEM) http://parsem.physics.auth.gr/
  • 2005 – 2008: IST Contract No 006903 “ULTRAGAN”
    InAlN/(In)GaN Heterostructure Technology for Ultra-high Power Microwave Transistor
  • 2005 – 2007: Program «Pithagoras ΙΙ» ΕPΕΑΕΚ (IPΕPTH)
    Growth and study of silicon films for the manufacturing of microelectronic devices of high performance in large surfaces
  • 2005 – 2007: Scientific and technological cooperationm between RTD organizations in Greece and RTD organizations in USA (GGΕΤ)
    Process-induced strain modification in strained silicon layers and influence on device performance
  • 2005 – 2007: Program «Pithagoras ΙΙ» EPΕΑΕΚ (IPEPTH)
    Nanostructured metallic glasses for thermomechanical applications in hostile evnironments
  • 2004 – 2006: Joint Research and Technology programmes Greece – Poland (GGΕΤ)
    Interfacial phenomena and defect properties of nanostructured materials modeled by Finite Element analysis and Molecular Dynamics
  • 2004 – 2006: Program «Pithagoras Ι» ΕPΕΑΕΚ (IPΕPTH)
    Characterization and properties of new semiconductor ΙΙΙ-V heterostructures-nanostructures
  • 2003 – 2005: Joint Research and Technology programmes Greece – Czech Republic (GGΕΤ)
    III-V nanostructures/heterostructures grown on lattice mismatched substrates
  • 2003 – 2005: Joint Research and Technology programmes Greece – Czech Republic (GGΕΤ)
    Growth and characterization of self-organized porous arrays on InGaP/GaAs heterostructures
  • 2002 – 2005: PENED01 ΕD481 (GGΕΤ)
    Semiconductor optoelectronic devices in the UV range
  • 2001 – 2002: IETHA/GDΑΒΕΤ
  • 2000 – 2003: Research Training Network (RTN) Νο HPRN-CT-1999-00040 of the EU.
    Interface analysis at atomic level and Properties of Advanced Materials (IPAM)
  • 2000 – 2001: PENED 99ΕD 320 (GGΕΤ)
  • 1999 – 2001: ΕPΕΤ ΙΙ (ΕPΕΤ ΙΙ) 98ΒΙΑ-23 (GGΕΤ)
  • 1999 – 2000: Exchange scientist program between Ε.Ι.Ε & C.N.R.S
  • 1998 – 1999: Exchange scientist program between Ε.Ι.Ε & C.N.R.S
  • 1996 – 1998: PENED 95 Α/Α 1504 (GGΕΤ)
  • 1994 – 1997: Human Capital Mobility, CHRX-CT94-0467
  • 1994 – 1995: Collaboration with France, program PLΑΤOΝ (GGΕΤ)
  • 1993 – 1995: PENED 91 ΕD811 (GGΕΤ)
  • 1993 – 1994: Collaboration with France, program PLΑΤOΝ (GGΕΤ)
  • 1992 – 1995: TMR SC1*-CT91-0703
  • 1992 – 1994: PENED 1989 (GGΕΤ)
  • 1987 – 1990: STIMULATION ACTION, ST2J-0289-C.
  • 1983 – 1984: program IPΕΤ