Prof. Thomas Kehagias

Prof. Thomas Kehagias

 

Address: Department of Physics, Aristotle University of Thessaloniki,
GR-54124, Thessaloniki, Greece
Tel: +30 2310 998023
email: kehagias@auth.gr
http://www.physics.auth.gr/people/82

 

 

Degrees: PhD in Physics (1991), BSc in Physics (1985)

Research Interests:

• Transmission Electron Microscopy (TEM) and High Resolution TEM
• Structural characterization of low dimensional semiconductor systems for micro/nano- electronic applications and photonics
• Nanostructures chemical content determination by Energy Dispersive X-ray spectroscopy (EDXS) , High Angle Annular Dark Field (HAADF) imaging and Electron Energy Loss Spectroscopy (EELS)
• Characterization of interfaces and defect structures in metals, metal alloys and superalloys. Correlation of mechanical properties and microstructure
• Growth and characterization of glass ceramics and nanocrystalline materials by powder metallurgy
• Characterization of advanced technology single- and multilayered coatings
• Vitrification of solid industrial waste
• Structural properties of metal nanoparticles in amorphous matrix for nano- and bio- technology applications

Research Activities:

• Coordinator of a national and an industrial program. Scientist in charge in seven European and twelve national programs

Academic Activities:

• Teaching undergraduate and postgraduate students
• Supervisor of PhD and MSc theses
• Member of numerous Scientific Societies
• Referee in international scientific peer-reviewed journals

Selected Publications:

• 3D-to-2D Morphology Manipulation of Sputter-Deposited Nanoscale Silver Films on Weakly Interacting Substrates via Selective Nitrogen Deployment for Multifunctional Metal Contacts
  Jamnig, A., Pliatsikas, N., Konpan, M., Lu, J., Kehagias, T.,Kotanidis, A.N., Kalfagiannis, N., Bellas, D.V., Lidorikis, E., Kovac, J.,Abadias, G., Petrov, I., Greene, J.E., Sarakinos, K.
  ACS Appl. Nano Mater., 3, 5, 4728–4738 (2020)
• Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy
  Eftychis, S., Kruse, J.E., Tsagaraki, K., Koukoula, T., Kehagias, T., Komninou, P., Georgakilas
  A., Journal of Crystal Growth, 514  89–97(2019)
• Compositional and strain analysis of In(Ga)N/GaN short period superlattices
  G.P. Dimitrakopulos, I.G Vasileiadis, C. Bazioti, J. Smalc-Koziorowska, S. Kret, E. Dimakis, N. Florini, T. Kehagias, T. Suski, T. Karakostas, T.D. Moustakas, P. Komninou
  J. Appl. Phys. 123, 024304 (2018)
• Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution
  Faber, H., Das, S., Lin, Y.-H., Pliatsikas, N., Zhao, K., Kehagias, T., Dimitrakopulos, G., Amassian, A., Patsalas, P.A., Anthopoulos, T.D.
  Science Advances, 3, 1602640 (2017)
• Study of fully epitaxial Fe/Pt bilayers for spin pumping by ferromagnetic resonance spectroscopy
  A. Conca, S. Keller, L. Mihalceanu, T. Kehagias, G. P. Dimitrakopulos, B. Hillebrands, and E. Th. Papaioannou
  Physical Review B 93, 134405 (2016)
• Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires
  Th. Kehagias, N. Florini, J. Kioseoglou, Th. Pavloudis, Ph. Komninou, T. Walther, K. Moratis, Z. Hatzopoulos, N. T. Pelekanos
  Semicond. Sci. Technol. 30, 114012 (2015)
• Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
  Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff and Ph. Komninou
  Nanotechnology 24, 435702 (2013)
• Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive
  A. Siozios, D. C. Koutsogeorgis, E. Lidorikis, G. P. Dimitrakopulos, Th. Kehagias, H. Zoubos, Ph. Komninou, W. M. Cranton, C. Kosmidis and P. Patsalas
  Nanoletters 12, 259 (2012)
• Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
  Z. Gacevic, A. Das, J. Teubert, Y. Kotsar, P. K. Kandaswamy, Th. Kehagias, T. Koukoula, Ph. Komninou, and E. Monroy
  J. Appl. Phys.. 109, 103501 (2011)
• Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy
  Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, Th. Karakostas, Ph. Komninou
  Appl. Phys. Lett. 95, 071905 (2009)
• Axial and radial growth of Ni-induced GaN nanowires
  L. Geelhaar, C. Chèze, W.M. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, Th. Karakostas
  Appl. Phys. Lett. 91, 093113 (2007)
• Misfit accommodation of compact and columnar InN grown on Ga-face GaN (0001) by ΜΒΕ
  Th. Kehagias, A. Delimitis, Ph. Komninou, E. Iliopoulos, E. Dimakis, A. Georgakilas, G. Nouet
  Appl. Phys. Let. 86, 151905 (2005)
• Misfit relaxation of the AlN/Al2O3 (0001) interface
  Th. Kehagias, Ph. Komninou, G. Nouet, P. Ruterana and Th. Karakostas
  Phys. Rev. B 64, 195329 (2001)